Engineering of metal-MoS2 contacts to overcome Fermi level pinning
نویسندگان
چکیده
Fermi level pinning (FLP) in metal-MoS2 contacts induces large Schottky barrier heights which turn results contact resistances. In this work, we made use of Density Functional Theory (DFT) to study the origin FLP MoS2 with a variety metals. We also reported how de-pinning could be attained by controlling distance between metal and MoS2. respect, can engineered means insertion proper buffer layers back-gated structures. This practically zeroed for some specific stacks, it is crucial attain Ohmic low series
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2022
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2022.108378